Samsung M471B5273EB0-CK0 4GB vs Samsung M393A2G40EB1-CPB 16GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Samsung M393A2G40EB1-CPB 16GB

Samsung M393A2G40EB1-CPB 16GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 56

左右 29% 更低的延时
更快的读取速度，GB/s

12.3 9.3

测试中的平均数值
更快的写入速度，GB/s

8.9 7.7

测试中的平均数值

Samsung M393A2G40EB1-CPB 16GB

需要考虑的原因
Samsung M393A2G40EB1-CPB 16GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Samsung M393A2G40EB1-CPB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 56
读取速度，GB/s

12.3 9.3
写入速度，GB/s

8.9 7.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1789 2200

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Mushkin 991988 (996988) 4GB

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Corsair CMK8GX4M2B4200C19 4GB

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SK Hynix HYMP512U64CP8-Y5 1GB

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Micron Technology 16ATF1G64HZ-2G1B1 8GB

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Samsung M471A2K43CB1-CTD 16GB

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Corsair CMK8GX4M2B4200C19 4GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Samsung M378A2K43CB1-CTD 16GB

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Kingston 9965525-155.A00LF 8GB

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Kingston 9905711-032.A00G 8GB

Kingston 9905711-032.A00G 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BL8G32C16S4B.8FE 8GB

Crucial Technology BL8G32C16S4B.8FE 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB

Samsung M393B2G70BH0-CK0 16GB

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Apacer Technology 78.C2GFP.C700B 8GB

Apacer Technology 78.C2GFP.C700B 8GB