SK Hynix HMA451U6AFR8N-TF 4GB vs Samsung M393A1G43DB1-CRC 8GB

总分

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

总分

Samsung M393A1G43DB1-CRC 8GB

Samsung M393A1G43DB1-CRC 8GB

差异规格评论

差异

SK Hynix HMA451U6AFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB

报告一个错误

更快的读取速度，GB/s

14.7 10.8

测试中的平均数值
更快的写入速度，GB/s

10.6 8.5

测试中的平均数值

Samsung M393A1G43DB1-CRC 8GB

需要考虑的原因
Samsung M393A1G43DB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 37

左右 -16% 更低的延时
更高的内存带宽，mbps

19200 17000

左右 1.13 更高的带宽

规格

完整的技术规格清单

SK Hynix HMA451U6AFR8N-TF 4GB

Samsung M393A1G43DB1-CRC 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

37 32
读取速度，GB/s

14.7 10.8
写入速度，GB/s

10.6 8.5
内存带宽，mbps

17000 19200

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2438 2349

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5474-010.A00LF 2GB

Avant Technology J641GU42J5213ND 8GB

Avant Technology J641GU42J5213ND 8GB

Samsung M393B1K70CH0-CH9 8GB

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AMD R948G2806U2S 8GB

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Samsung M378B5273DH0-CH9 4GB

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G Skill Intl F4-3600C16-16GTZN 16GB

G Skill Intl F4-3600C16-16GTZN 16GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5700-027.A00G 8GB

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Kingston 9905469-124.A00LF 4GB

Kingston 9905469-124.A00LF 4GB

Corsair CMH32GX4M2Z3200C16 16GB

Corsair CMH32GX4M2Z3200C16 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Crucial Technology BL8G32C16U4W.M8FE1 8GB

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Kingston 9905403-061.A00LF 2GB

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Corsair CMD16GX4M2E4000C19 8GB

Corsair CMD16GX4M2E4000C19 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Corsair CMW64GX4M4C3000C15 16GB

Corsair CMW64GX4M4C3000C15 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology BLS16G4D240FSB.16FD 16GB

Crucial Technology BLS16G4D240FSB.16FD 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Patriot Memory (PDP Systems) PSD48G240081 8GB

Patriot Memory (PDP Systems) PSD48G240081 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Samsung M393A2G40EB1-CRC 16GB

Samsung M393A2G40EB1-CRC 16GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Kingston 9905701-132.A00G 16GB

Kingston 9905701-132.A00G 16GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

Crucial Technology CT32G4SFD8266.C16FE 32GB

Crucial Technology CT32G4SFD8266.C16FE 32GB