SK Hynix HMA82GS6CJR8N-VK 16GB vs Micron Technology 9ASF1G72PZ-2G9E1 8GB

总分

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

总分

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

差异规格评论

差异

SK Hynix HMA82GS6CJR8N-VK 16GB

需要考虑的原因
SK Hynix HMA82GS6CJR8N-VK 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 54

左右 33% 更低的延时
更快的读取速度，GB/s

15 10.4

测试中的平均数值
更快的写入速度，GB/s

10.1 8.2

测试中的平均数值

Micron Technology 9ASF1G72PZ-2G9E1 8GB

需要考虑的原因
Micron Technology 9ASF1G72PZ-2G9E1 8GB

报告一个错误

更高的内存带宽，mbps

23400 21300

左右 1.1 更高的带宽

规格

完整的技术规格清单

SK Hynix HMA82GS6CJR8N-VK 16GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 54
读取速度，GB/s

15.0 10.4
写入速度，GB/s

10.1 8.2
内存带宽，mbps

21300 23400

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 26
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

2657 2259

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9965516-031.A00LF 16GB

Kingston 9965516-031.A00LF 16GB

Netac Technology Co Ltd EKBLACK4163216AD 8GB

Netac Technology Co Ltd EKBLACK4163216AD 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Kingston ACR26D4S9S8MH-8 8GB

Kingston ACR26D4S9S8MH-8 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Samsung M391A2K43BB1-CTD 16GB

Samsung M391A2K43BB1-CTD 16GB

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Kingston 9965669-008.A03G 16GB

Kingston 9965669-008.A03G 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400

A-DATA Technology AM1P24HC4R1-BUNS 4GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

Patriot Memory (PDP Systems) PSD44G240081S 4GB

Patriot Memory (PDP Systems) PSD44G240081S 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingston HP32D4U8S8HC-8X 8GB

Kingston HP32D4U8S8HC-8X 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology BL16G30C15U4B.M16FE1 16GB

Crucial Technology BL16G30C15U4B.M16FE1 16GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Crucial Technology CT8G4DFS8266.M8FD 8GB

Crucial Technology CT8G4DFS8266.M8FD 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Samsung M471A1G43DB0-CPB 8GB

Samsung M471A1G43DB0-CPB 8GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Kingston KVR24N17S8/4 4GB

Kingston KVR24N17S8/4 4GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

G Skill Intl F4-3600C16-32GVK 32GB

G Skill Intl F4-3600C16-32GVK 32GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-2666C18-8GTZR 8GB

G Skill Intl F4-2666C18-8GTZR 8GB