SK Hynix HMP125U6EFR8C-S6 2GB vs Samsung M378A1K43BB2-CTD 8GB

总分

SK Hynix HMP125U6EFR8C-S6 2GB

SK Hynix HMP125U6EFR8C-S6 2GB

总分

Samsung M378A1K43BB2-CTD 8GB

Samsung M378A1K43BB2-CTD 8GB

差异规格评论

差异

SK Hynix HMP125U6EFR8C-S6 2GB

需要考虑的原因
SK Hynix HMP125U6EFR8C-S6 2GB

报告一个错误

更快的读取速度，GB/s

4 17.9

测试中的平均数值
更快的写入速度，GB/s

2,042.4 13.8

测试中的平均数值

Samsung M378A1K43BB2-CTD 8GB

需要考虑的原因
Samsung M378A1K43BB2-CTD 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 61

左右 -190% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMP125U6EFR8C-S6 2GB

Samsung M378A1K43BB2-CTD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 21
读取速度，GB/s

4,448.3 17.9
写入速度，GB/s

2,042.4 13.8
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

860 3167

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFS8266.C8FD1 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

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Crucial Technology BLS8G4S240FSD.16FBD2 8GB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

KingSpec KingSpec 16GB

KingSpec KingSpec 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

G Skill Intl F4-3600C17-16GTZR 16GB

G Skill Intl F4-3600C17-16GTZR 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

G Skill Intl F4-4400C17-16GVK 16GB

G Skill Intl F4-4400C17-16GVK 16GB