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SK Hynix HMP125U6EFR8C-S6 2GB
Samsung M378A1K43BB2-CTD 8GB

SK Hynix HMP125U6EFR8C-S6 2GB vs Samsung M378A1K43BB2-CTD 8GB

Overall score
star star star star star
SK Hynix HMP125U6EFR8C-S6 2GB

SK Hynix HMP125U6EFR8C-S6 2GB

Overall score
star star star star star
Samsung M378A1K43BB2-CTD 8GB

Samsung M378A1K43BB2-CTD 8GB

Differences Specifications Comments

Differences

SK Hynix HMP125U6EFR8C-S6 2GB Reasons to consider
SK Hynix HMP125U6EFR8C-S6 2GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 17.9
    Average value in the tests
  • Faster write speed, GB/s
    2,042.4 left arrow 13.8
    Average value in the tests
Samsung M378A1K43BB2-CTD 8GB Reasons to consider
Samsung M378A1K43BB2-CTD 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    21 left arrow 61
    Around -190% lower latency
  • Higher memory bandwidth, mbps
    21300 left arrow 6400
    Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix HMP125U6EFR8C-S6 2GB
Samsung M378A1K43BB2-CTD 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    61 left arrow 21
  • Read speed, GB/s
    4,448.3 left arrow 17.9
  • Write speed, GB/s
    2,042.4 left arrow 13.8
  • Memory bandwidth, mbps
    6400 left arrow 21300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    860 left arrow 3167

SK Hynix HMP125U6EFR8C-S6 2GB RAM comparisons

Kingston KVR800D2N6/2G 2GB
Mushkin MR[A/B]4U300JJJM8G 8GB

Samsung M378A1K43BB2-CTD 8GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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