RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
SK Hynix HMT151R7TFR4C-H9 4GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

SK Hynix HMT151R7TFR4C-H9 4GB vs A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

总分
star star star star star
SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

总分
star star star star star
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

差异 规格 评论

差异

SK Hynix HMT151R7TFR4C-H9 4GB 需要考虑的原因
SK Hynix HMT151R7TFR4C-H9 4GB
报告一个错误
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB 需要考虑的原因
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 48
    左右 -41% 更低的延时
  • 更快的读取速度，GB/s
    14.5 left arrow 10.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.1 left arrow 7.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT151R7TFR4C-H9 4GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 34
  • 读取速度，GB/s
    10.1 left arrow 14.5
  • 写入速度，GB/s
    7.0 left arrow 12.1
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1955 left arrow 2756

SK Hynix HMT151R7TFR4C-H9 4GB RAM的比较

SK Hynix HMT151R7BFR4C-H9 4GB
Crucial Technology BLS4G4D240FSB.8FARG? 4GB

A-DATA Technology AO1P26KC8T1-BXFSHC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
Golden Empire CL16-18-18 D4-3400 4GB
Golden Empire CL16-18-18 D4-3400 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Avant Technology J642GU42J5213N4 16GB
Avant Technology J642GU42J5213N4 16GB
内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
G Skill Intl F4-3200C14-8GVR 8GB
G Skill Intl F4-3200C14-8GVR 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KST-2133MHZ-4G 4GB
Kingston KST-2133MHZ-4G 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Samsung M378A2K43BB1-CPB 16GB
Samsung M378A2K43BB1-CPB 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston 9905712-001.B00G 16GB
Kingston 9905712-001.B00G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Mushkin 99[2/7/4]189F 4GB
Mushkin 99[2/7/4]189F 4GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
G Skill Intl F4-2400C16-4GFX 4GB
G Skill Intl F4-2400C16-4GFX 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston 9905678-026.A00G 8GB
Kingston 9905678-026.A00G 8GB
内存RAM