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SK Hynix HMT151R7TFR4C-H9 4GB
Samsung M378A1G43TB1-CTD 8GB

SK Hynix HMT151R7TFR4C-H9 4GB vs Samsung M378A1G43TB1-CTD 8GB

总分
star star star star star
SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

总分
star star star star star
Samsung M378A1G43TB1-CTD 8GB

Samsung M378A1G43TB1-CTD 8GB

差异 规格 评论

差异

SK Hynix HMT151R7TFR4C-H9 4GB 需要考虑的原因
SK Hynix HMT151R7TFR4C-H9 4GB
报告一个错误
Samsung M378A1G43TB1-CTD 8GB 需要考虑的原因
Samsung M378A1G43TB1-CTD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 48
    左右 -71% 更低的延时
  • 更快的读取速度，GB/s
    16.6 left arrow 10.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 7.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT151R7TFR4C-H9 4GB
Samsung M378A1G43TB1-CTD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 28
  • 读取速度，GB/s
    10.1 left arrow 16.6
  • 写入速度，GB/s
    7.0 left arrow 13.7
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1955 left arrow 3007

SK Hynix HMT151R7TFR4C-H9 4GB RAM的比较

SK Hynix HMT151R7BFR4C-H9 4GB
Crucial Technology BLS4G4D240FSB.8FARG? 4GB

Samsung M378A1G43TB1-CTD 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Micron Technology 16JTF25664AZ-1G4F1 2GB
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内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Samsung M378A1G43TB1-CTD 8GB
Samsung M378A1G43TB1-CTD 8GB
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Essencore Limited KD48GU88C-26N1600 8GB
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内存RAM
Samsung M393B1G70BH0-YK0 8GB
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内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
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内存RAM
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内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
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内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
内存RAM
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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Crucial Technology CT8G4DFS8213.C8FBR1 8GB
内存RAM
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G Skill Intl F4-3200C16-8GVK 8GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
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Corsair CM4B16G1L3200K18K2 16GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
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Micron Technology 36ASF4G72LZ-2G3A1 32GB
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