SK Hynix HMT31GR7BFR4C-H9 8GB vs Crucial Technology CT4G4DFS8213.C8FAR2 4GB

总分

SK Hynix HMT31GR7BFR4C-H9 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

总分

Crucial Technology CT4G4DFS8213.C8FAR2 4GB

Crucial Technology CT4G4DFS8213.C8FAR2 4GB

差异规格评论

差异

SK Hynix HMT31GR7BFR4C-H9 8GB

需要考虑的原因
SK Hynix HMT31GR7BFR4C-H9 8GB

报告一个错误

Crucial Technology CT4G4DFS8213.C8FAR2 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FAR2 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 58

左右 -66% 更低的延时
更快的读取速度，GB/s

14.4 8.2

测试中的平均数值
更快的写入速度，GB/s

10.7 6.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT31GR7BFR4C-H9 8GB

Crucial Technology CT4G4DFS8213.C8FAR2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

58 35
读取速度，GB/s

8.2 14.4
写入速度，GB/s

6.4 10.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1718 2426

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Lexar Co Limited LD4AU016G-H2666G 16GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Corsair CMK16GX4M2F4400C19 8GB

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Kingston 9905403-156.A00LF 2GB

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Apacer Technology GD2.1831WS.001 16GB

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Samsung M471B5273DH0-CH9 4GB

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Kingston 9905584-016.A00LF 4GB

Kingston KF3600C16D4/8GX 8GB

Kingston KF3600C16D4/8GX 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Avant Technology W6451U66J9266ND 4GB

Avant Technology W6451U66J9266ND 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-4000C18-16GVK 16GB

G Skill Intl F4-4000C18-16GVK 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Essencore Limited IM4AGU88N24-FFFHMB 16GB