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SK Hynix HMT31GR7BFR4C-H9 8GB
G Skill Intl F4-3200C18-16GRS 16GB

SK Hynix HMT31GR7BFR4C-H9 8GB vs G Skill Intl F4-3200C18-16GRS 16GB

总分
star star star star star
SK Hynix HMT31GR7BFR4C-H9 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

总分
star star star star star
G Skill Intl F4-3200C18-16GRS 16GB

G Skill Intl F4-3200C18-16GRS 16GB

差异 规格 评论

差异

SK Hynix HMT31GR7BFR4C-H9 8GB 需要考虑的原因
SK Hynix HMT31GR7BFR4C-H9 8GB
报告一个错误
G Skill Intl F4-3200C18-16GRS 16GB 需要考虑的原因
G Skill Intl F4-3200C18-16GRS 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 58
    左右 -45% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 8.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.0 left arrow 6.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT31GR7BFR4C-H9 8GB
G Skill Intl F4-3200C18-16GRS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 40
  • 读取速度，GB/s
    8.2 left arrow 16.0
  • 写入速度，GB/s
    6.4 left arrow 14.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1718 left arrow 2965

SK Hynix HMT31GR7BFR4C-H9 8GB RAM的比较

SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT102464BF1339.C16 8GB

G Skill Intl F4-3200C18-16GRS 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT31GR7BFR4C-H9 8GB
SK Hynix HMT31GR7BFR4C-H9 8GB
G Skill Intl F4-3200C18-16GRS 16GB
G Skill Intl F4-3200C18-16GRS 16GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
G Skill Intl F4-3600C14-16GVK 16GB
G Skill Intl F4-3600C14-16GVK 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Crucial Technology CB16GU2666.C8ET 16GB
Crucial Technology CB16GU2666.C8ET 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB
Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-2400C15-4GRK 4GB
G Skill Intl F4-2400C15-4GRK 4GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Zotac Technology Ltd OD48G32S816-ZHC 8GB
Zotac Technology Ltd OD48G32S816-ZHC 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Avant Technology W641GU42J9266NB 8GB
Avant Technology W641GU42J9266NB 8GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
SK Hynix HMA851S6CJR6N-VK 4GB
SK Hynix HMA851S6CJR6N-VK 4GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT8G4SFS8213.C8FH1 8GB
Crucial Technology CT8G4SFS8213.C8FH1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Essencore Limited KD48GS88C-32N2200 8GB
Essencore Limited KD48GS88C-32N2200 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Apacer Technology GD2.11173T.001 4GB
Apacer Technology GD2.11173T.001 4GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Ramaxel Technology RMSA3230KB78HAF2133 8GB
Ramaxel Technology RMSA3230KB78HAF2133 8GB
内存RAM