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SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-2800C15-16GRKD 16GB

SK Hynix HMT31GR7CFR4C-PB 8GB vs G Skill Intl F4-2800C15-16GRKD 16GB

总分
star star star star star
SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

总分
star star star star star
G Skill Intl F4-2800C15-16GRKD 16GB

G Skill Intl F4-2800C15-16GRKD 16GB

差异 规格 评论

差异

SK Hynix HMT31GR7CFR4C-PB 8GB 需要考虑的原因
SK Hynix HMT31GR7CFR4C-PB 8GB
报告一个错误
G Skill Intl F4-2800C15-16GRKD 16GB 需要考虑的原因
G Skill Intl F4-2800C15-16GRKD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 51
    左右 -82% 更低的延时
  • 更快的读取速度，GB/s
    14.1 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.9 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-2800C15-16GRKD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 28
  • 读取速度，GB/s
    9.8 left arrow 14.1
  • 写入速度，GB/s
    8.2 left arrow 10.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2182 left arrow 2931

SK Hynix HMT31GR7CFR4C-PB 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT31GR7CFR4C-PB 8GB
Corsair CMY8GX3M2A2666C10 4GB

G Skill Intl F4-2800C15-16GRKD 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
INTENSO 5641152 4GB
INTENSO 5641152 4GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-2800C15-16GRKD 16GB
G Skill Intl F4-2800C15-16GRKD 16GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Corsair CM4X8GF2666C18S2 8GB
Corsair CM4X8GF2666C18S2 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CM4X16GD3200C16K2E 16GB
Corsair CM4X16GD3200C16K2E 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
A-DATA Technology AO1P24HCST2-BSCS 16GB
A-DATA Technology AO1P24HCST2-BSCS 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston KHX2666C13D4/4GX 4GB
Kingston KHX2666C13D4/4GX 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-3200C14-16GTZN 16GB
G Skill Intl F4-3200C14-16GTZN 16GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
G Skill Intl F4-3200C16-4GRKD 4GB
G Skill Intl F4-3200C16-4GRKD 4GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT8G4SFD824A.C16FHP 8GB
Crucial Technology CT8G4SFD824A.C16FHP 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KF3600C16D4/8GX 8GB
Kingston KF3600C16D4/8GX 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Kingston XF875V-HYA 8GB
Kingston XF875V-HYA 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CM4X8GF2133C13K4 8GB
Corsair CM4X8GF2133C13K4 8GB
内存RAM
Samsung M471B1G73EB0-YK0 8GB
Samsung M471B1G73EB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
G Skill Intl F4-2400C15-4GRR 4GB
G Skill Intl F4-2400C15-4GRR 4GB
内存RAM