SK Hynix HMT325S6BFR8C-H9 2GB vs Crucial Technology BLS8G4D240FSEK.8FD 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Crucial Technology BLS8G4D240FSEK.8FD 8GB

Crucial Technology BLS8G4D240FSEK.8FD 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

Crucial Technology BLS8G4D240FSEK.8FD 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSEK.8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 41

左右 -64% 更低的延时
更快的读取速度，GB/s

14.1 11.6

测试中的平均数值
更快的写入速度，GB/s

8.7 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology BLS8G4D240FSEK.8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 25
读取速度，GB/s

11.6 14.1
写入速度，GB/s

7.3 8.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1438 2372

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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SK Hynix HMA42GR7AFR4N-TF 16GB

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Kingston 9965589-024.D01G 16GB

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Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Corsair CMK64GX4M2C3200C16 32GB

Corsair CMK64GX4M2C3200C16 32GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

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Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CM4X32GC3200C16K2E 32GB

Corsair CM4X32GC3200C16K2E 32GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Crucial Technology CT8G4DFD824A.C16FBR2 8GB

Crucial Technology CT8G4DFD824A.C16FBR2 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB