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SK Hynix HMT325S6BFR8C-H9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4A-H9 8GB
比较
SK Hynix HMT325S6BFR8C-H9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4A-H9 8GB
总分
SK Hynix HMT325S6BFR8C-H9 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4A-H9 8GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB
报告一个错误
更快的读取速度,GB/s
11.6
10.6
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4A-H9 8GB
报告一个错误
低于PassMark测试中的延时,ns
33
41
左右 -24% 更低的延时
更快的写入速度,GB/s
8.9
7.3
测试中的平均数值
规格
完整的技术规格清单
SK Hynix HMT325S6BFR8C-H9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4A-H9 8GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
41
33
读取速度,GB/s
11.6
10.6
写入速度,GB/s
7.3
8.9
内存带宽,mbps
10600
10600
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9
时序/时钟速度
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
排名PassMark (越多越好)
1438
2316
SK Hynix HMT325S6BFR8C-H9 2GB RAM的比较
Elpida EBJ21UE8BDS0-DJ-F 2GB
Kingston 99U5469-041.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4A-H9 8GB RAM的比较
Corsair CMD16GX4M2B3733C17 8GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT325S6BFR8C-H9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4A
Elpida EBJ40EG8BFWB-JS-F 4GB
Kingston KF2933C17S4/16G 16GB
AMD R5S38G1601U2S 8GB
Kingston ACR26D4S9S1KA-4 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Samsung M378A1K43BB1-CPB 8GB
Kingston 9905403-011.A03LF 2GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Corsair CMSX16GX4M2A2400C16 8GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Wilk Elektronik S.A. IRH3200D464L16/16G 16GB
Kingston 99U5584-004.A00LF 4GB
Samsung M471A1K1KBB0-CPB 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMK32GX4M4C3333C16 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
Samsung M391B5673FH0-CH9 2GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Samsung M378B5673EH1-CF8 2GB
V-Color Technology Inc. TA48G36S818BN 8GB
Samsung M378B5773DH0-CH9 2GB
Apacer Technology GD2.111881.002 4GB
报告一个错误
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