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SK Hynix HMT325S6CFR8C-H9 2GB
Chun Well Technology Holding Limited D4U0830160B 8GB

SK Hynix HMT325S6CFR8C-H9 2GB vs Chun Well Technology Holding Limited D4U0830160B 8GB

总分
star star star star star
SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

总分
star star star star star
Chun Well Technology Holding Limited D4U0830160B 8GB

Chun Well Technology Holding Limited D4U0830160B 8GB

差异 规格 评论

差异

SK Hynix HMT325S6CFR8C-H9 2GB 需要考虑的原因
SK Hynix HMT325S6CFR8C-H9 2GB
报告一个错误
Chun Well Technology Holding Limited D4U0830160B 8GB 需要考虑的原因
Chun Well Technology Holding Limited D4U0830160B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 43
    左右 -34% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 10.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325S6CFR8C-H9 2GB
Chun Well Technology Holding Limited D4U0830160B 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 32
  • 读取速度，GB/s
    10.7 left arrow 17.4
  • 写入速度，GB/s
    6.8 left arrow 12.5
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1314 left arrow 3137

SK Hynix HMT325S6CFR8C-H9 2GB RAM的比较

Wilk Elektronik S.A. GR1600S364L11/8G 8GB
Kingston ACR256X64D3S1333C9 2GB

Chun Well Technology Holding Limited D4U0830160B 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KF548C38-16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Chun Well Technology Holding Limited D4U0830160B 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
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G Skill Intl F4-2666C18-8GTZR 8GB
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内存RAM
Samsung M471B5273CH0-CH9 4GB
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Transcend Information JM3200HLB-16GK 8GB
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AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
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Kingston X5H5PW-MIE 8GB
内存RAM
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Crucial Technology CT8G3S186DM.C16FN 8GB
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Crucial Technology CT102464BF160B.C16 8GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
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Smart Modular SF4642G8CK8IEHLSBG 16GB
内存RAM
Kingston ACR16D3LU1KBG/4G 4GB
Kingston ACR16D3LU1KBG/4G 4GB
Kingston KF3600C16D4/16GX 16GB
Kingston KF3600C16D4/16GX 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C16-8GVKC 8GB
G Skill Intl F4-3600C16-8GVKC 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
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内存RAM
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TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMSX16GX4M1A2666C18 16GB
Corsair CMSX16GX4M1A2666C18 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2800C16-4GRR 4GB
G Skill Intl F4-2800C16-4GRR 4GB
内存RAM