SK Hynix HMT325S6CFR8C-PB 2GB vs Micron Technology TEAMGROUP-UD4-2133 16GB

总分

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分

Micron Technology TEAMGROUP-UD4-2133 16GB

Micron Technology TEAMGROUP-UD4-2133 16GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB

报告一个错误

更快的写入速度，GB/s

6.6 5.6

测试中的平均数值

Micron Technology TEAMGROUP-UD4-2133 16GB

需要考虑的原因
Micron Technology TEAMGROUP-UD4-2133 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 38

左右 -58% 更低的延时
更快的读取速度，GB/s

12.6 10.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-PB 2GB

Micron Technology TEAMGROUP-UD4-2133 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 24
读取速度，GB/s

10.9 12.6
写入速度，GB/s

6.6 5.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1406 2130

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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Kingston 9965525-018.A00LF 4GB

Corsair CMSX16GX4M2A3000C18 8GB

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AMD R534G1601U1S-UO 4GB

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Micron Technology 16ATF1G64AZ-2G3A2 8GB

Micron Technology 16ATF1G64AZ-2G3A2 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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