SK Hynix HMT325U6CFR8C-PB 2GB vs Micron Technology 4ATF51264HZ-2G3B1 4GB

总分

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分

Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

差异规格评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB

报告一个错误

Micron Technology 4ATF51264HZ-2G3B1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G3B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 43

左右 -23% 更低的延时
更快的读取速度，GB/s

14.8 12.3

测试中的平均数值
更快的写入速度，GB/s

11.2 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6CFR8C-PB 2GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 35
读取速度，GB/s

12.3 14.8
写入速度，GB/s

8.1 11.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1706 2336

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT151R7TFR4C-H9 4GB

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Kingston K821PJ-MID 16GB

Kingston K821PJ-MID 16GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

SpecTek Incorporated ?????????????????? 2GB

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Corsair CMK32GX4M4Z2933C16 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

G Skill Intl F4-3000C15-4GTZ 4GB

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Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Corsair CMH128GX4M4E3200C16 32GB

Corsair CMH128GX4M4E3200C16 32GB