SK Hynix HMT351R7EFR8C-RD 4GB vs G Skill Intl F4-3200C16-8GTZ 8GB

总分

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

总分

G Skill Intl F4-3200C16-8GTZ 8GB

G Skill Intl F4-3200C16-8GTZ 8GB

差异规格评论

差异

SK Hynix HMT351R7EFR8C-RD 4GB

需要考虑的原因
SK Hynix HMT351R7EFR8C-RD 4GB

报告一个错误

G Skill Intl F4-3200C16-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GTZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 37

左右 -42% 更低的延时
更快的读取速度，GB/s

19.8 9.8

测试中的平均数值
更快的写入速度，GB/s

15.8 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351R7EFR8C-RD 4GB

G Skill Intl F4-3200C16-8GTZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 26
读取速度，GB/s

9.8 19.8
写入速度，GB/s

7.2 15.8
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2065 3635

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Mushkin 994052 4GB

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Kingston 99U5403-036.A00G 4GB

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Samsung M378B5173BH0-CH9 4GB

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Corsair CMG32GX4M2E3200C16 16GB

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Micron Technology 18ASF2G72PDZ-2G6D1 16GB

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Kingston 99U5469-045.A00LF 4GB

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Corsair CMR128GX4M8X3800C19 16GB

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Peak Electronics 256X64M-67E 2GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Samsung M378A2K43DB1-CVF 16GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

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Kingston HP32D4S2S1ME-8 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Chun Well Technology Holding Limited D4U0826190B 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

G Skill Intl F4-2400C15-4GVR 4GB

G Skill Intl F4-2400C15-4GVR 4GB