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SK Hynix HMT351R7EFR8C-RD 4GB
Samsung M378A5244CB0-CTD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB vs Samsung M378A5244CB0-CTD 4GB

总分
star star star star star
SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

总分
star star star star star
Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

差异 规格 评论

差异

SK Hynix HMT351R7EFR8C-RD 4GB 需要考虑的原因
SK Hynix HMT351R7EFR8C-RD 4GB
报告一个错误
Samsung M378A5244CB0-CTD 4GB 需要考虑的原因
Samsung M378A5244CB0-CTD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 37
    左右 -3% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 14900
    左右 1.43 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT351R7EFR8C-RD 4GB
Samsung M378A5244CB0-CTD 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 36
  • 读取速度，GB/s
    9.8 left arrow 15.8
  • 写入速度，GB/s
    7.2 left arrow 11.8
  • 内存带宽，mbps
    14900 left arrow 21300
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2065 left arrow 2497

SK Hynix HMT351R7EFR8C-RD 4GB RAM的比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMT351R7EFR4A-H9 4GB

Samsung M378A5244CB0-CTD 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Corsair CMSX8GX4M2A2666C18 4GB
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
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内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Kingston KHX3000C15/16GX 16GB
Kingston KHX3000C15/16GX 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
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Essencore Limited IM4AGU88A30-FGGHMB 16GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
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Smart Modular SF4641G8CK8IEHLSBG 8GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
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Apacer Technology D12.2344DT.001 4GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
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Crucial Technology BLS8G4D240FSC.16FBD2 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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内存RAM
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SK Hynix HYMP164U64CP6-Y5 512MB
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Kingmax Semiconductor GLLG42F-18---------- 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
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Golden Empire CL19-19-19 D4-2666 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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SK Hynix HMA81GS6CJR8N-VK 8GB
内存RAM