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SK Hynix HMT351R7EFR8C-RD 4GB
Samsung V-GeN D4S8GL24A8 8GB

SK Hynix HMT351R7EFR8C-RD 4GB vs Samsung V-GeN D4S8GL24A8 8GB

总分
star star star star star
SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

总分
star star star star star
Samsung V-GeN D4S8GL24A8 8GB

Samsung V-GeN D4S8GL24A8 8GB

差异 规格 评论

差异

SK Hynix HMT351R7EFR8C-RD 4GB 需要考虑的原因
SK Hynix HMT351R7EFR8C-RD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 73
    左右 49% 更低的延时
  • 更快的写入速度，GB/s
    7.2 left arrow 7.1
    测试中的平均数值
Samsung V-GeN D4S8GL24A8 8GB 需要考虑的原因
Samsung V-GeN D4S8GL24A8 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.1 left arrow 9.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 14900
    左右 1.29 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT351R7EFR8C-RD 4GB
Samsung V-GeN D4S8GL24A8 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 73
  • 读取速度，GB/s
    9.8 left arrow 14.1
  • 写入速度，GB/s
    7.2 left arrow 7.1
  • 内存带宽，mbps
    14900 left arrow 19200
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2065 left arrow 1609

SK Hynix HMT351R7EFR8C-RD 4GB RAM的比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMT351R7EFR4A-H9 4GB

Samsung V-GeN D4S8GL24A8 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-061.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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