SK Hynix HMT41GS6AFR8A-PB 8GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

总分

SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

总分

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

差异规格评论

差异

SK Hynix HMT41GS6AFR8A-PB 8GB

需要考虑的原因
SK Hynix HMT41GS6AFR8A-PB 8GB

报告一个错误

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

需要考虑的原因
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 48

左右 -30% 更低的延时
更快的读取速度，GB/s

16 11.6

测试中的平均数值
更快的写入速度，GB/s

12.6 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT41GS6AFR8A-PB 8GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 37
读取速度，GB/s

11.6 16.0
写入速度，GB/s

7.8 12.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2029 2808

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. Team-Elite-2133 4GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Crucial Technology BLS8G4D240FSB.16FADG 8GB

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Kingston 99U5471-020.A00LF 4GB

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Gloway International Co. Ltd. TYA4U2400D17081C 8GB

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

Corsair CMD16GX4M4C3200C16 4GB

Corsair CMD16GX4M4C3200C16 4GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

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Kingston 9905711-002.A00G 4GB

Infineon (Siemens) 64T32000HU3.7A 256MB

Infineon (Siemens) 64T32000HU3.7A 256MB

Panram International Corporation M424016 4GB

Panram International Corporation M424016 4GB