SK Hynix HMT451S6BFR8A-PB 4GB vs Crucial Technology CT8G4DFS8213.C8FAD1 8GB

总分

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

差异规格评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB

需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB

报告一个错误

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8213.C8FAD1 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 44

左右 -76% 更低的延时
更快的读取速度，GB/s

13.7 12.3

测试中的平均数值
更快的写入速度，GB/s

8.0 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT451S6BFR8A-PB 4GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 25
读取速度，GB/s

12.3 13.7
写入速度，GB/s

7.8 8.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1977 2290

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R5316G1609U2K 8GB

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Samsung M378B5773DH0-CH9 2GB

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SK Hynix HMAA4GS6AJR8N-XN 32GB

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AMD R5S38G1601U2S 8GB

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Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

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Kingston 9905403-156.A00LF 2GB

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Micron Technology 9ASF1G72PZ-2G9E1 8GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Kingston 9965516-049.A00LF 8GB

Kingston 9965516-049.A00LF 8GB

Avant Technology J644GU44J9266NQ 32GB

Avant Technology J644GU44J9266NQ 32GB