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SK Hynix HMT451S6BFR8A-PB 4GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

SK Hynix HMT451S6BFR8A-PB 4GB vs Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

总分
star star star star star
SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分
star star star star star
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

差异 规格 评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB 需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    44 left arrow 73
    左右 40% 更低的延时
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB 需要考虑的原因
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.2 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.1 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT451S6BFR8A-PB 4GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 73
  • 读取速度，GB/s
    12.3 left arrow 15.2
  • 写入速度，GB/s
    7.8 left arrow 9.1
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1977 left arrow 1843

SK Hynix HMT451S6BFR8A-PB 4GB RAM的比较

Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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SK Hynix HMT451S6BFR8A-PB 4GB
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