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SK Hynix HYMP112S64CP6-S6 1GB
Crucial Technology CB4GU2400.M8E 4GB

SK Hynix HYMP112S64CP6-S6 1GB vs Crucial Technology CB4GU2400.M8E 4GB

总分
star star star star star
SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

总分
star star star star star
Crucial Technology CB4GU2400.M8E 4GB

Crucial Technology CB4GU2400.M8E 4GB

差异 规格 评论

差异

SK Hynix HYMP112S64CP6-S6 1GB 需要考虑的原因
SK Hynix HYMP112S64CP6-S6 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    65 left arrow 71
    左右 8% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 14.8
    测试中的平均数值
Crucial Technology CB4GU2400.M8E 4GB 需要考虑的原因
Crucial Technology CB4GU2400.M8E 4GB
报告一个错误
  • 更快的写入速度，GB/s
    7.9 left arrow 1,711.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP112S64CP6-S6 1GB
Crucial Technology CB4GU2400.M8E 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 71
  • 读取速度，GB/s
    4,018.7 left arrow 14.8
  • 写入速度，GB/s
    1,711.1 left arrow 7.9
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    513 left arrow 1799

SK Hynix HYMP112S64CP6-S6 1GB RAM的比较

Corsair VSA2GSDS667C4 2GB
SK Hynix HYMP125S64CP8-S6 2GB

Crucial Technology CB4GU2400.M8E 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
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内存RAM
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内存RAM
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