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SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB

SK Hynix HYMP112U64CP8-S5 1GB vs Crucial Technology CT16G4SFD824A.C16FBR 16GB

总分
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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分
star star star star star
Crucial Technology CT16G4SFD824A.C16FBR 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

差异 规格 评论

差异

SK Hynix HYMP112U64CP8-S5 1GB 需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 14.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,978.2 left arrow 10.6
    测试中的平均数值
Crucial Technology CT16G4SFD824A.C16FBR 16GB 需要考虑的原因
Crucial Technology CT16G4SFD824A.C16FBR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 66
    左右 -89% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 35
  • 读取速度，GB/s
    2,929.1 left arrow 14.5
  • 写入速度，GB/s
    2,978.2 left arrow 10.6
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    511 left arrow 2664

SK Hynix HYMP112U64CP8-S5 1GB RAM的比较

OCZ OCZ2SOE800URB1G 1GB
Kingston 9905295-025.B00LF 1GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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SK Hynix DDR2 800 2G 2GB
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G Skill Intl F4-3600C19-16GSXW 16GB
G Skill Intl F4-3600C19-16GSXW 16GB
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Kingston KHX2133C11D3/4GX 4GB
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Samsung M386B4G70DM0-CMA4 32GB
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内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
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Shenzhen Technology Co Ltd 8GB
内存RAM
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Samsung M378B5173BH0-CH9 4GB
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InnoDisk Corporation M4C0-AGS1TCSJ 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Samsung V-GeN D4S16GL26A8TL6 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
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TwinMOS 9DNPBNZB-TATP 4GB
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G Skill Intl F4-4600C18-8GTZR 8GB
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