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SK Hynix HYMP112U64CP8-S5 1GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
比较
SK Hynix HYMP112U64CP8-S5 1GB vs Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
总分
SK Hynix HYMP112U64CP8-S5 1GB
总分
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB
报告一个错误
更快的读取速度,GB/s
2
18.7
测试中的平均数值
更快的写入速度,GB/s
2,978.2
15.9
测试中的平均数值
需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
66
左右 -128% 更低的延时
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
SK Hynix HYMP112U64CP8-S5 1GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
66
29
读取速度,GB/s
2,929.1
18.7
写入速度,GB/s
2,978.2
15.9
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
511
3594
SK Hynix HYMP112U64CP8-S5 1GB RAM的比较
OCZ OCZ2SOE800URB1G 1GB
Kingston 9905295-025.B00LF 1GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-061.A00LF 2GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
Apacer Technology 78.01G86.9H50C 1GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
Kingston 99U5474-038.A00LF 4GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
Kingston 99P5471-004.A01LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Corsair CMX8GX3M2A1600C11 4GB
Kingston KHX1600C10D3/4G 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-4000C19-8GTZSW 8GB
SK Hynix HYMP125U64CP8-S6 2GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Samsung M378B1G73DB0-CK0 8GB
Samsung M471B5273DH0-CK0 4GB
PNY Electronics PNY 2GB
Kingston KVR26N19D8/16 16GB
Kingston 99U5474-037.A00LF 4GB
Essencore Limited IM4AGU88A30-FGGHMB 16GB
Asgard VMA45UG-MEC1U2AW1 8GB
Chun Well Technology Holding Limited CL16-20-20 D4-3000
Kingston HP669238-071-HYC 4GB
Samsung M391A1K43BB1-CRC 8GB
AMD R5316G1609U2K 8GB
SK Hynix HMA82GS7AFR8N-UH 16GB
报告一个错误
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