SK Hynix HYMP112U64CP8-S6 1GB vs Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 22.6

测试中的平均数值
更快的写入速度，GB/s

2,076.1 16.4

测试中的平均数值

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 59

左右 -84% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 32
读取速度，GB/s

4,723.5 22.6
写入速度，GB/s

2,076.1 16.4
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 3
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

741 3837

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 99U5458-002.A00LF 2GB

Kingston 99U5458-002.A00LF 2GB

Avant Technology J641GU42J5213ND 8GB

Avant Technology J641GU42J5213ND 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Kingston CBD24D4S7D8MA-16 16GB

Kingston CBD24D4S7D8MA-16 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M378A5143TB2-CTD 4GB

Samsung M378A5143TB2-CTD 4GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB

Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F4-2666C19-16GRS 16GB

G Skill Intl F4-2666C19-16GRS 16GB

G Skill Intl F2-9600CL6-2GBRH 2GB

G Skill Intl F2-9600CL6-2GBRH 2GB

SK Hynix HMA41GR7AFR4N-UH 8GB

SK Hynix HMA41GR7AFR4N-UH 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Kingston KGTWW1-MIE 4GB

Kingston KGTWW1-MIE 4GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

SK Hynix HMA42GR7AFR4N-UH 16GB

SK Hynix HMA42GR7AFR4N-UH 16GB

Kingston 99U5315-023.A00LF 512MB

Kingston 99U5315-023.A00LF 512MB

Samsung M471A2K43CB1-CRC 16GB

Samsung M471A2K43CB1-CRC 16GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Teikon TMA451S6AFR8N-TFSC 4GB

Teikon TMA451S6AFR8N-TFSC 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Corsair CMK64GX4M8Z2933C16 8GB

Corsair CMK64GX4M8Z2933C16 8GB