SK Hynix HYMP125S64CP8-S6 2GB vs Kingston HP26D4S9S8MD-8 8GB

总分

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

总分

Kingston HP26D4S9S8MD-8 8GB

Kingston HP26D4S9S8MD-8 8GB

差异规格评论

差异

SK Hynix HYMP125S64CP8-S6 2GB

需要考虑的原因
SK Hynix HYMP125S64CP8-S6 2GB

报告一个错误

更快的读取速度，GB/s

4 14.4

测试中的平均数值

Kingston HP26D4S9S8MD-8 8GB

需要考虑的原因
Kingston HP26D4S9S8MD-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 68

左右 -94% 更低的延时
更快的写入速度，GB/s

9.9 2,013.5

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP125S64CP8-S6 2GB

Kingston HP26D4S9S8MD-8 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 35
读取速度，GB/s

4,402.8 14.4
写入速度，GB/s

2,013.5 9.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

701 2452

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C16-8GTRG 8GB

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Samsung M471A1K43EB1-CWE 8GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Mushkin MR[A/B]4U266GHHF16G 16GB

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Corsair CMX4GX3M2A1600C9 2GB

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Apacer Technology D22.23263S.002 16GB

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Essencore Limited IM44GU48N28-GGGHM 4GB

Essencore Limited IM44GU48N28-GGGHM 4GB

Kingston KHX1600C9D3/8G 8GB

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Corsair CMK16GX4M2C3000C15 8GB

Corsair CMK16GX4M2C3000C15 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

AMD AE34G1601U1 4GB

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A-DATA Technology DDR4 2133 2OZ 8GB

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Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

Kingston KHX2666C16/8G 8GB

Kingston KHX2666C16/8G 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Crucial Technology BL8G32C16U4W.M8FE 8GB

Crucial Technology BL8G32C16U4W.M8FE 8GB