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SK Hynix HYMP125U64CP8-S6 2GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB

SK Hynix HYMP125U64CP8-S6 2GB vs Crucial Technology BLS4G4D26BFSB.8FB 4GB

总分
star star star star star
SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

总分
star star star star star
Crucial Technology BLS4G4D26BFSB.8FB 4GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB

差异 规格 评论

差异

SK Hynix HYMP125U64CP8-S6 2GB 需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 13
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,381.6 left arrow 13.5
    测试中的平均数值
Crucial Technology BLS4G4D26BFSB.8FB 4GB 需要考虑的原因
Crucial Technology BLS4G4D26BFSB.8FB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 60
    左右 -54% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP125U64CP8-S6 2GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 39
  • 读取速度，GB/s
    5,082.2 left arrow 13.0
  • 写入速度，GB/s
    2,381.6 left arrow 13.5
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    925 left arrow 2808

SK Hynix HYMP125U64CP8-S6 2GB RAM的比较

A-DATA Technology DQKD1A08 1GB
Samsung M4 70T5663QZ3-CE6 2GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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Essencore Limited KD48GU88C-26N1600 8GB
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Corsair CMZ16GX3M2A2400C10 8GB
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Corsair CMZ16GX3M2A2400C10 8GB
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Crucial Technology BLS8G3N18AES4.16FE 8GB
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内存RAM
Samsung M393B2G70BH0-CK0 16GB
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G Skill Intl F5-6400J3239G16G 16GB
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内存RAM
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内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
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内存RAM
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内存RAM
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内存RAM
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Kingston 9905584-016.A00LF 4GB
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Corsair CMT16GX4M2C3600C18 8GB
内存RAM