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SK Hynix HYMP125U64CP8-S6 2GB
Kingston K9CXF2-MIE 8GB

SK Hynix HYMP125U64CP8-S6 2GB vs Kingston K9CXF2-MIE 8GB

总分
star star star star star
SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

总分
star star star star star
Kingston K9CXF2-MIE 8GB

Kingston K9CXF2-MIE 8GB

差异 规格 评论

差异

SK Hynix HYMP125U64CP8-S6 2GB 需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 15.8
    测试中的平均数值
Kingston K9CXF2-MIE 8GB 需要考虑的原因
Kingston K9CXF2-MIE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 60
    左右 -82% 更低的延时
  • 更快的写入速度，GB/s
    9.4 left arrow 2,381.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP125U64CP8-S6 2GB
Kingston K9CXF2-MIE 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 33
  • 读取速度，GB/s
    5,082.2 left arrow 15.8
  • 写入速度，GB/s
    2,381.6 left arrow 9.4
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    925 left arrow 2597

SK Hynix HYMP125U64CP8-S6 2GB RAM的比较

A-DATA Technology DQKD1A08 1GB
Samsung M4 70T5663QZ3-CE6 2GB

Kingston K9CXF2-MIE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 9965525-018.A00LF 4GB
Kllisre DDR4-8GB 8GB
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内存RAM
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Samsung M378A1K43EB2-CWE 8GB
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Kingston 99U5469-045.A00LF 4GB
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Micron Technology 4ATS1G64HZ-2G3B1 8GB
内存RAM
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内存RAM
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Kingston 9905624-043.A00G 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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Crucial Technology BLS8G4D30BESBK.8FD 8GB
内存RAM
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takeMS International AG TMS2GB264D082-805G 2GB
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Mushkin 99[2/7/4]208F 8GB
内存RAM
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Samsung M386B4G70DM0-CMA4 32GB
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内存RAM