SK Hynix HYMP125U64CP8-S6 2GB vs Kingston KHX2133C13S4/4G 4GB

总分

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

总分

Kingston KHX2133C13S4/4G 4GB

Kingston KHX2133C13S4/4G 4GB

差异规格评论

差异

SK Hynix HYMP125U64CP8-S6 2GB

需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB

报告一个错误

更快的读取速度，GB/s

5 14.8

测试中的平均数值
更快的写入速度，GB/s

2,381.6 11.2

测试中的平均数值

Kingston KHX2133C13S4/4G 4GB

需要考虑的原因
Kingston KHX2133C13S4/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 60

左右 -140% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP125U64CP8-S6 2GB

Kingston KHX2133C13S4/4G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 25
读取速度，GB/s

5,082.2 14.8
写入速度，GB/s

2,381.6 11.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

925 2346

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M395T2863QZ4-CF76 1GB

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Crucial Technology BL16G32C16U4W.M8FB1 16GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Kingston 99U5429-007.A00LF 2GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Micron Technology 16ATF2G64HZ-2G6E1 16GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

Apacer Technology 78.CAGNT.4050B 8GB

Apacer Technology 78.CAGNT.4050B 8GB

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Kingston KVR533D2N4 512MB

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A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

Crucial Technology CT102464BF160B.C16 8GB

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Crucial Technology CT8G4DFS6266.M4FB 8GB

Crucial Technology CT8G4DFS6266.M4FB 8GB