SK Hynix HYMP31GF72CMP4D5Y5 8GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

总分

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

总分

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

差异规格评论

差异

SK Hynix HYMP31GF72CMP4D5Y5 8GB

需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB

报告一个错误

更快的读取速度，GB/s

3 15.6

测试中的平均数值

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

需要考虑的原因
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

报告一个错误

低于PassMark测试中的延时，ns

71 117

左右 -65% 更低的延时
更快的写入速度，GB/s

6.4 2,303.7

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

117 71
读取速度，GB/s

3,094.8 15.6
写入速度，GB/s

2,303.7 6.4
内存带宽，mbps

5300 21300

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

no data 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

784 1650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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