SK Hynix HYMP512U64CP8-Y5 1GB vs Micron Technology 8ATF1G64HZ-2G3B1 8GB

总分

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

总分

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

差异规格评论

差异

SK Hynix HYMP512U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP512U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

3 14.2

测试中的平均数值

Micron Technology 8ATF1G64HZ-2G3B1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G3B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 63

左右 -75% 更低的延时
更快的写入速度，GB/s

10.7 1,583.7

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP512U64CP8-Y5 1GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 36
读取速度，GB/s

3,895.6 14.2
写入速度，GB/s

1,583.7 10.7
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

639 2474

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5469-045.A00LF 4GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Crucial Technology CT8G4DFS8266.K8FB 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Kingston KHX1600C9D3/8G 8GB

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Crucial Technology BL16G32C16U4R.16FE 16GB

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Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

SpecTek Incorporated 16G2666CL19 16GB

SpecTek Incorporated 16G2666CL19 16GB

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Kingston 9965669-005.A01G 16GB

Kingston 9965669-005.A01G 16GB

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SpecTek Incorporated ?????????????????? 2GB

Kingston 9905744-067.A00G 32GB

Kingston 9905744-067.A00G 32GB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

G Skill Intl F4-3200C22-8GRS 8GB

G Skill Intl F4-3200C22-8GRS 8GB