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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
A-DATA Technology AD4U240038G17-BHYA 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs A-DATA Technology AD4U240038G17-BHYA 8GB

总分
star star star star star
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分
star star star star star
A-DATA Technology AD4U240038G17-BHYA 8GB

A-DATA Technology AD4U240038G17-BHYA 8GB

差异 规格 评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB 需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 14.4
    测试中的平均数值
A-DATA Technology AD4U240038G17-BHYA 8GB 需要考虑的原因
A-DATA Technology AD4U240038G17-BHYA 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 63
    左右 -174% 更低的延时
  • 更快的写入速度，GB/s
    9.0 left arrow 1,447.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
A-DATA Technology AD4U240038G17-BHYA 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 23
  • 读取速度，GB/s
    3,231.0 left arrow 14.4
  • 写入速度，GB/s
    1,447.3 left arrow 9.0
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    478 left arrow 2408

STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较

Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB

A-DATA Technology AD4U240038G17-BHYA 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M471B5273DH0-CH9 4GB
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Kingston 9905403-038.A00LF 4GB
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Micron Technology AFLD416EH1P 16GB
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内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
A-DATA Technology AD4U240038G17-BHYA 8GB
A-DATA Technology AD4U240038G17-BHYA 8GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
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Wilk Elektronik S.A. W-HK26S16G 16GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C16-8GRS 8GB
G Skill Intl F4-2400C16-8GRS 8GB
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Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
Corsair CMW16GX4M2Z3200C16 8GB
Corsair CMW16GX4M2Z3200C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
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Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
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Corsair CMK16GX4M2K4500C19 8GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
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Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
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