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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Chun Well Technology Holding Limited MD4U1632161DCW 16GB
总分
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
总分
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
差异
规格
评论
差异
需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
更快的读取速度,GB/s
3
15.7
测试中的平均数值
需要考虑的原因
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
报告一个错误
低于PassMark测试中的延时,ns
31
63
左右 -103% 更低的延时
更快的写入速度,GB/s
13.3
1,447.3
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
63
31
读取速度,GB/s
3,231.0
15.7
写入速度,GB/s
1,447.3
13.3
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
478
3318
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-3466C16-8GTZSK 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
Samsung M393B5270CH0-CH9 4GB
V-Color Technology Inc. TL48G30S8KSRGB15 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
OCMEMORY OCM2933CL16-16GBH 16GB
TwinMOS 8DHE3MN8-HATP 2GB
V-Color Technology Inc. TD416G26D819-VC 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Chun Well Technology Holding Limited MD4U1632161DCW 16G
Crucial Technology CT16G4SFRA266.C8FE 16GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
Samsung M471B5173DB0-YK0 4GB
Kingston HP37D4U1S8ME-8XR 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C15-8GTZSK 8GB
AMD R538G1601U2S 8GB
Golden Empire CL18-22-22 D4-3600 16GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology CT8G4SFS8213.C8FBR1 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-3200C16-4GVKB 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Crucial Technology CT16G4SFD8213.C16FBR 16GB
报告一个错误
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Bug description
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