STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Corsair CMK16GX4M2Z2933C16 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Corsair CMK16GX4M2Z2933C16 8GB

Corsair CMK16GX4M2Z2933C16 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 17.4

测试中的平均数值

Corsair CMK16GX4M2Z2933C16 8GB

需要考虑的原因
Corsair CMK16GX4M2Z2933C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 63

左右 -110% 更低的延时
更快的写入速度，GB/s

14.5 1,447.3

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMK16GX4M2Z2933C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 30
读取速度，GB/s

3,231.0 17.4
写入速度，GB/s

1,447.3 14.5
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

478 3393

RAM Latency Calculator

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RAM 2

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最新比较

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PNY Electronics PNY 2GB

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Crucial Technology CT8G4DFS6266.M4FE 8GB

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Ramaxel Technology RMSA3340MB88HBF-3200 16GB

Ramaxel Technology RMSA3340MB88HBF-3200 16GB

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Samsung M471A5244CB0-CWE 4GB

Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire CL16-16-16 D4-3200 4GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N

Kingston MSI16D3LS1MNG/8G 8GB

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Corsair CMK32GX4M4A2800C16 8GB

Corsair CMK32GX4M4A2800C16 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

G Skill Intl F4-3866C18-8GTZ 8GB

G Skill Intl F4-3866C18-8GTZ 8GB