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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Crucial Technology BLT8G4D30AETA.K16FE 8GB
总分
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
总分
Crucial Technology BLT8G4D30AETA.K16FE 8GB
差异
规格
评论
差异
需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
更快的读取速度,GB/s
3
18.3
测试中的平均数值
需要考虑的原因
Crucial Technology BLT8G4D30AETA.K16FE 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
63
左右 -125% 更低的延时
更快的写入速度,GB/s
13.5
1,447.3
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
63
28
读取速度,GB/s
3,231.0
18.3
写入速度,GB/s
1,447.3
13.5
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
478
3247
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Golden Empire CL16-18-18 D4-3200 8GB
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Apacer Technology 78.01G86.9H50C 1GB
Corsair CMK16GX4M2K4000C19 8GB
Samsung M395T5160QZ4-CE66 2GB
Mushkin 99[2/7/4]208F 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Kllisre 8GB
Apacer Technology 78.01GA0.9K5 1GB
G Skill Intl F4-3600C19-8GSXW 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
Samsung M395T5160QZ4-CE66 2GB
Kingston ACR26D4U9S8HJ-8 8GB
报告一个错误
×
Bug description
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