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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB
比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Micron Technology 18ADF2G72AZ-2G3A1 16GB
总分
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
总分
Micron Technology 18ADF2G72AZ-2G3A1 16GB
差异
规格
评论
差异
需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
更快的读取速度,GB/s
3
17.8
测试中的平均数值
需要考虑的原因
Micron Technology 18ADF2G72AZ-2G3A1 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
63
左右 -125% 更低的延时
更快的写入速度,GB/s
14.7
1,447.3
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
63
28
读取速度,GB/s
3,231.0
17.8
写入速度,GB/s
1,447.3
14.7
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
478
3660
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology DDR4 2400 16GB
G Skill Intl F4-3000C15-8GRKB 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CM4B8G1J3000K16W4 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
G Skill Intl F4-2400C16-16GRS 16GB
Unifosa Corporation HU564404EP0200 4GB
Kingston 9905630-025.A00G 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
G Skill Intl F4-2666C15-4GRR 4GB
Kingston 99U5429-007.A00LF 2GB
Samsung M393A2K40BB2-CTD 16GB
Samsung M386B4G70DM0-CMA4 32GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
SK Hynix HYMP125U64CP8-S6 2GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston KDK8NX-MIE 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CM4X4GF2400C16N2 4GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB
报告一个错误
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Bug description
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