STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

低于PassMark测试中的延时，ns

63 73

左右 14% 更低的延时
更快的读取速度，GB/s

3 15.1

测试中的平均数值

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

报告一个错误

更快的写入速度，GB/s

7.9 1,447.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 73
读取速度，GB/s

3,231.0 15.1
写入速度，GB/s

1,447.3 7.9
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

478 1724

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Corsair CMK16GX4M2B3000C15 8GB

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Crucial Technology BLE4G4D26AFEA.8FADG 4GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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SK Hynix HMA82GU6CJR8N-VK 16GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

SK Hynix HYMP112S64CP6-S6 1GB

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Corsair CM4X8GF2400C16K4 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMT16GX4M2C3200C16 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

G Skill Intl F4-3000C16-8GSXWB 8GB

G Skill Intl F4-3000C16-8GSXWB 8GB