RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Strontium EVMT8G1600U86S 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB

Strontium EVMT8G1600U86S 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB

总分
star star star star star
Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB

差异 规格 评论

差异

Strontium EVMT8G1600U86S 8GB 需要考虑的原因
Strontium EVMT8G1600U86S 8GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 31
    左右 -15% 更低的延时
  • 更快的读取速度，GB/s
    13.5 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.3 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Strontium EVMT8G1600U86S 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    31 left arrow 27
  • 读取速度，GB/s
    11.7 left arrow 13.5
  • 写入速度，GB/s
    7.2 left arrow 11.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1990 left arrow 2430

Strontium EVMT8G1600U86S 8GB RAM的比较

Strontium EVMT8G1333U86S 8GB
Corsair CMW16GX4M2Z3200C16 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB RAM的比较

Kingston ACR16D3LS1NGG/2G 2GB
Kingmax Semiconductor FLGG45F-E8K3B 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Strontium EVMT8G1600U86S 8GB
Strontium EVMT8G1600U86S 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Corsair CM4X4GF2400Z16K4 4GB
Corsair CM4X4GF2400Z16K4 4GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-4266C17-16GTZRB 16GB
G Skill Intl F4-4266C17-16GTZRB 16GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Kingston 9905622-025.A01G 4GB
Kingston 9905622-025.A01G 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Corsair CMD64GX4M8A2400C14 8GB
Corsair CMD64GX4M8A2400C14 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Corsair CMW64GX4M8X3600C18 8GB
Corsair CMW64GX4M8X3600C18 8GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Corsair CMD64GX4M4C3200C16 16GB
Corsair CMD64GX4M4C3200C16 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
A-DATA Technology AO2P24HC8T1-BTBS 8GB
A-DATA Technology AO2P24HC8T1-BTBS 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Jinyu CL16-16-16 D4-2400 8GB
Jinyu CL16-16-16 D4-2400 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
InnoDisk Corporation 16GB
InnoDisk Corporation 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
SK Hynix HMA81GU6DJR8N-VK 8GB
SK Hynix HMA81GU6DJR8N-VK 8GB
内存RAM