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takeMS International AG TMS2GB264D082-805G 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
比较
takeMS International AG TMS2GB264D082-805G 2GB vs Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
总分
takeMS International AG TMS2GB264D082-805G 2GB
总分
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
更快的读取速度,GB/s
5
17.3
测试中的平均数值
需要考虑的原因
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
46
左右 -84% 更低的延时
更快的写入速度,GB/s
13.7
1,852.4
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
25
读取速度,GB/s
5,535.6
17.3
写入速度,GB/s
1,852.4
13.7
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
858
2994
takeMS International AG TMS2GB264D082-805G 2GB RAM的比较
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB RAM的比较
Kingston 9905471-002.A00LF 2GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
takeMS International AG TMS2GB264D082-805G 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
Team Group Inc. Team-Elite-1333 4GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Essencore Limited IM4AGU88A30-FGGHMB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Panram International Corporation PUD42400C154GNJW 4GB
Avexir Technologies Corporation DDR3-1600 CL10 8GB
Crucial Technology BLM16G40C18U4B.M8FB1 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston X2YH1K-MIE 16GB
报告一个错误
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Bug description
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