takeMS International AG TMS2GB264D083805EV 2GB vs Crucial Technology CT16G4DFD8213.C16FBR 16GB

总分

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分

Crucial Technology CT16G4DFD8213.C16FBR 16GB

Crucial Technology CT16G4DFD8213.C16FBR 16GB

差异规格评论

差异

takeMS International AG TMS2GB264D083805EV 2GB

需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB

报告一个错误

更快的读取速度，GB/s

3 13.7

测试中的平均数值

Crucial Technology CT16G4DFD8213.C16FBR 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.C16FBR 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 50

左右 -32% 更低的延时
更快的写入速度，GB/s

9.4 1,457.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D083805EV 2GB

Crucial Technology CT16G4DFD8213.C16FBR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 38
读取速度，GB/s

3,757.3 13.7
写入速度，GB/s

1,457.4 9.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

557 2471

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Crucial Technology CT16G4DFD8213.C16FBR 16GB

Crucial Technology CT16G4DFD8213.C16FBR 16GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Mushkin 99[2/7/4]191[F/T] 4GB

Mushkin 99[2/7/4]191[F/T] 4GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Samsung M391B1G73QH0-CMA 8GB

Samsung M391B1G73QH0-CMA 8GB

G Skill Intl F4-3000C15-8GRR 8GB

G Skill Intl F4-3000C15-8GRR 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

Ramsta Ramsta-2666MHz-4G 4GB

Ramsta Ramsta-2666MHz-4G 4GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Apacer Technology 78.C1GM3.C7Z0B 8GB

Apacer Technology 78.C1GM3.C7Z0B 8GB

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

G Skill Intl F4-3733C17-8GTZA 8GB

G Skill Intl F4-3733C17-8GTZA 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Crucial Technology CT16G4SFRA32A.M16FR 16GB

Crucial Technology CT16G4SFRA32A.M16FR 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

G Skill Intl F4-4133C19-8GTZA 8GB

G Skill Intl F4-4133C19-8GTZA 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3200C16-8GTRS 8GB

G Skill Intl F4-3200C16-8GTRS 8GB