RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D083805EV 2GB
Golden Empire CL18-22-22 D4-3600 16GB
比较
takeMS International AG TMS2GB264D083805EV 2GB vs Golden Empire CL18-22-22 D4-3600 16GB
总分
takeMS International AG TMS2GB264D083805EV 2GB
总分
Golden Empire CL18-22-22 D4-3600 16GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
更快的读取速度,GB/s
3
18.2
测试中的平均数值
需要考虑的原因
Golden Empire CL18-22-22 D4-3600 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
50
左右 -67% 更低的延时
更快的写入速度,GB/s
14.7
1,457.4
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Golden Empire CL18-22-22 D4-3600 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
50
30
读取速度,GB/s
3,757.3
18.2
写入速度,GB/s
1,457.4
14.7
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
557
3533
takeMS International AG TMS2GB264D083805EV 2GB RAM的比较
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Golden Empire CL18-22-22 D4-3600 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
takeMS International AG TMS2GB264D083805EV 2GB
Golden Empire CL18-22-22 D4-3600 16GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMK32GX4M4B3200C14 8GB
Micron Technology 16KTF51264HZ-1G6M1 4GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
AMD R5S38G1601U2S 8GB
Kingston KHX2666C13D4/4GX 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT8G4DFD8213.C16FBD1 8GB
SK Hynix HYMP125S64CP8-S6 2GB
Mushkin MR[ABC]4U320GJJM32G 32GB
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology CT4G4SFS8213.C8FADP 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
King Tiger Technology TMKG8G3000C17(XMP) 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Samsung M471A5143SB1-CRC 4GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3400C16-8GTZKW 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-2666C16-8GRB 8GB
Samsung M391B5673FH0-CH9 2GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
报告一个错误
×
Bug description
Source link