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takeMS International AG TMS2GB264D083805EV 2GB
Golden Empire CL18-22-22 D4-3600 16GB

takeMS International AG TMS2GB264D083805EV 2GB vs Golden Empire CL18-22-22 D4-3600 16GB

总分
star star star star star
takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分
star star star star star
Golden Empire CL18-22-22 D4-3600 16GB

Golden Empire CL18-22-22 D4-3600 16GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D083805EV 2GB 需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.2
    测试中的平均数值
Golden Empire CL18-22-22 D4-3600 16GB 需要考虑的原因
Golden Empire CL18-22-22 D4-3600 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 50
    左右 -67% 更低的延时
  • 更快的写入速度，GB/s
    14.7 left arrow 1,457.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Golden Empire CL18-22-22 D4-3600 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 30
  • 读取速度，GB/s
    3,757.3 left arrow 18.2
  • 写入速度，GB/s
    1,457.4 left arrow 14.7
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    557 left arrow 3533

takeMS International AG TMS2GB264D083805EV 2GB RAM的比较

Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Golden Empire CL18-22-22 D4-3600 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M378B5673FH0-CH9 2GB
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内存RAM
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SK Hynix V-GeN D4H4GL26A8TL 4GB
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内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
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Samsung M471A1G43DB0-0-B 8GB
内存RAM
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内存RAM
Kingston 9965433-034.A00LF 4GB
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内存RAM
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Samsung M471B1G73QH0-YK0 8GB
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A-DATA Technology AM2P24HC4R1-BUPS 4GB
内存RAM
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Ramaxel Technology RMT1970ED48E8F1066 2GB
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内存RAM
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内存RAM
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Swissbit MEU25664D6BC2EP-30 2GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
Jinyu 16GB
Jinyu 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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Heoriady M471A1K43CB1-CTD 8GB
内存RAM
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PNY Electronics PNY 2GB
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Mushkin MRX4U300GJJM16G 16GB
内存RAM
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Corsair CMD16GX3M2A1866C9 8GB
INTENSO M418039 8GB
INTENSO M418039 8GB
内存RAM