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takeMS International AG TMS2GB264D083805EV 2GB
Kingston KHX3200C16D4/4GX 4GB
比较
takeMS International AG TMS2GB264D083805EV 2GB vs Kingston KHX3200C16D4/4GX 4GB
总分
takeMS International AG TMS2GB264D083805EV 2GB
总分
Kingston KHX3200C16D4/4GX 4GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
更快的读取速度,GB/s
3
17.3
测试中的平均数值
需要考虑的原因
Kingston KHX3200C16D4/4GX 4GB
报告一个错误
低于PassMark测试中的延时,ns
31
50
左右 -61% 更低的延时
更快的写入速度,GB/s
14.0
1,457.4
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Kingston KHX3200C16D4/4GX 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
50
31
读取速度,GB/s
3,757.3
17.3
写入速度,GB/s
1,457.4
14.0
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
557
3112
takeMS International AG TMS2GB264D083805EV 2GB RAM的比较
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston KHX3200C16D4/4GX 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1K70QB0-CK0 8GB
Corsair CMW64GX4M2D3600C18 32GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Ramaxel Technology RMSA3320MJ78HAF-3200 8GB
Kingston 9905584-016.A00LF 4GB
Kingston 9905678-058.A00G 4GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT16G4SFRA32A.M16FR 16GB
SK Hynix HMT151R7TFR4C-H9 4GB
Kingston KHX2400C15S4/8G 8GB
AMD R5S38G1601U2S 8GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
SK Hynix DDR2 800 2G 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
ASint Technology SSA302G08-EGN1C 4GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
A-DATA Technology DOVF1B163G2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N
Crucial Technology CT51264AC800.C16FC 4GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
A-DATA Technology DDR2 800G 2GB
Transcend Information TS1GSH64V4B 8GB
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Corsair CMX4GX3M2A1600C9 2GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Kingston 99U5584-001.A00LF 4GB
Micron Technology HMA81GU6AFR8N-UH 8GB
报告一个错误
×
Bug description
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