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TwinMOS 8DHE3MN8-HATP 2GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB

TwinMOS 8DHE3MN8-HATP 2GB vs A-DATA Technology AO1P32NC8W1-BDAS 8GB

总分
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分
star star star star star
A-DATA Technology AO1P32NC8W1-BDAS 8GB

A-DATA Technology AO1P32NC8W1-BDAS 8GB

差异 规格 评论

差异

TwinMOS 8DHE3MN8-HATP 2GB 需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    870.4 left arrow 11.5
    测试中的平均数值
A-DATA Technology AO1P32NC8W1-BDAS 8GB 需要考虑的原因
A-DATA Technology AO1P32NC8W1-BDAS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    49 left arrow 87
    左右 -78% 更低的延时
  • 更高的内存带宽，mbps
    25600 left arrow 5300
    左右 4.83 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    87 left arrow 49
  • 读取速度，GB/s
    3,155.6 left arrow 15.8
  • 写入速度，GB/s
    870.4 left arrow 11.5
  • 内存带宽，mbps
    5300 left arrow 25600
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    417 left arrow 2673

TwinMOS 8DHE3MN8-HATP 2GB RAM的比较

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

A-DATA Technology AO1P32NC8W1-BDAS 8GB RAM的比较

Kingston ACR512X64D3S13C9G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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A-DATA Technology AO1P32NC8W1-BDAS 8GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
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内存RAM
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内存RAM
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Samsung M471B5273DH0-CH9 4GB
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内存RAM
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G Skill Intl F4-4000C19-16GTZR 16GB
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