TwinMOS 8DHE3MN8-HATP 2GB vs Corsair CM4X16GD3200C16K2E 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Corsair CM4X16GD3200C16K2E 16GB

Corsair CM4X16GD3200C16K2E 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 14.8

测试中的平均数值
更快的写入速度，GB/s

870.4 11.4

测试中的平均数值

Corsair CM4X16GD3200C16K2E 16GB

需要考虑的原因
Corsair CM4X16GD3200C16K2E 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 87

左右 -181% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CM4X16GD3200C16K2E 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 31
读取速度，GB/s

3,155.6 14.8
写入速度，GB/s

870.4 11.4
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3122

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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