TwinMOS 8DHE3MN8-HATP 2GB vs Crucial Technology BLS4G4D26BFSC.8FD2 4GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 18.7

测试中的平均数值
更快的写入速度，GB/s

870.4 13.6

测试中的平均数值

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSC.8FD2 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 87

左右 -314% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 21
读取速度，GB/s

3,155.6 18.7
写入速度，GB/s

870.4 13.6
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

417 2807

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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AMD R5316G1609U2K 8GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

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Crucial Technology CT16G4SFD824A.M16FJ 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Kingston RB24D4U7S8MB-8 8GB

Kingston RB24D4U7S8MB-8 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

G Skill Intl F4-3200C16-8GTZSW 8GB

G Skill Intl F4-3200C16-8GTZSW 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-2133C15-8GNS 8GB

G Skill Intl F4-2133C15-8GNS 8GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

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SK Hynix HMA82GU6CJR8N-VK 16GB