TwinMOS 8DHE3MN8-HATP 2GB vs EVGA 16G-D4-2666-MR 4GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

EVGA 16G-D4-2666-MR 4GB

EVGA 16G-D4-2666-MR 4GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.3

测试中的平均数值
更快的写入速度，GB/s

870.4 12.8

测试中的平均数值

EVGA 16G-D4-2666-MR 4GB

需要考虑的原因
EVGA 16G-D4-2666-MR 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 87

左右 -278% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

EVGA 16G-D4-2666-MR 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 23
读取速度，GB/s

3,155.6 17.3
写入速度，GB/s

870.4 12.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 2942

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Samsung M378B5273CH0-CH9 4GB

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Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

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Corsair CMW256GX4M8E3200C16 32GB

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Kingston 99U5403-036.A00G 4GB

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AMD AE34G2139U2 4GB

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Kingston KHX2133C14D4/4G 4GB

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Kingston LV36D4U1S8HD-8XR 8GB

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Kingston 99U5584-004.A00LF 4GB

Crucial Technology CT8G4DFS8213.M8FB 8GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

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