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TwinMOS 8DHE3MN8-HATP 2GB
Gloway International (HK) STK2400CL17SNB16GB 16GB

TwinMOS 8DHE3MN8-HATP 2GB vs Gloway International (HK) STK2400CL17SNB16GB 16GB

总分
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分
star star star star star
Gloway International (HK) STK2400CL17SNB16GB 16GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

差异 规格 评论

差异

TwinMOS 8DHE3MN8-HATP 2GB 需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    870.4 left arrow 13.2
    测试中的平均数值
Gloway International (HK) STK2400CL17SNB16GB 16GB 需要考虑的原因
Gloway International (HK) STK2400CL17SNB16GB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 87
    左右 -278% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    87 left arrow 23
  • 读取速度，GB/s
    3,155.6 left arrow 17.5
  • 写入速度，GB/s
    870.4 left arrow 13.2
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    417 left arrow 3171

TwinMOS 8DHE3MN8-HATP 2GB RAM的比较

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

Gloway International (HK) STK2400CL17SNB16GB 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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