TwinMOS 8DHE3MN8-HATP 2GB vs Golden Empire CL14-16-16 D4-2400 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Golden Empire CL14-16-16 D4-2400 16GB

Golden Empire CL14-16-16 D4-2400 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 16.5

测试中的平均数值
更快的写入速度，GB/s

870.4 12.6

测试中的平均数值

Golden Empire CL14-16-16 D4-2400 16GB

需要考虑的原因
Golden Empire CL14-16-16 D4-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 87

左右 -211% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Golden Empire CL14-16-16 D4-2400 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 28
读取速度，GB/s

3,155.6 16.5
写入速度，GB/s

870.4 12.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 2903

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16ATF1G64AZ-2G1A2 8GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Kingston 9905700-046.A00G 16GB

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Samsung M471B5273CH0-CH9 4GB

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Kingston XW21KG-MIE2 8GB

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Samsung M391B5673FH0-CH9 2GB

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Patriot Memory (PDP Systems) PSD416G320081 16GB

Patriot Memory (PDP Systems) PSD416G320081 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Micron Technology 8ATF1G64HZ-2G1A1 8GB

Micron Technology 8ATF1G64HZ-2G1A1 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3600C16-8GTZKK 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

Strontium SRP2G86U1-S6M 2GB

Strontium SRP2G86U1-S6M 2GB

G Skill Intl F4-4400C17-8GVK 8GB

G Skill Intl F4-4400C17-8GVK 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Crucial Technology CT16G4S24AM.M16FE 16GB

Crucial Technology CT16G4S24AM.M16FE 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Asgard VMA44UG-MEC1U2AW1 8GB

Asgard VMA44UG-MEC1U2AW1 8GB

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

V-GEN D4H8GL36A8TXV 8GB

V-GEN D4H8GL36A8TXV 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Corsair CMK16GX4M4A2400C16 4GB

Corsair CMK16GX4M4A2400C16 4GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Corsair CMK16GX4M2F4400C19 8GB

Corsair CMK16GX4M2F4400C19 8GB