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TwinMOS 8DHE3MN8-HATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
比较
TwinMOS 8DHE3MN8-HATP 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
总分
TwinMOS 8DHE3MN8-HATP 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
更快的读取速度,GB/s
3
13.8
测试中的平均数值
更快的写入速度,GB/s
870.4
9.8
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
87
左右 -222% 更低的延时
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
87
27
读取速度,GB/s
3,155.6
13.8
写入速度,GB/s
870.4
9.8
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
417
2323
TwinMOS 8DHE3MN8-HATP 2GB RAM的比较
takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB RAM的比较
Apacer Technology 78.01G86.9H50C 1GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3600C19-16GSXW 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
Samsung M3 78T3354BZ0-CCC 256MB
Kingston KHX3200C16D4/32GX 32GB
Swissbit MEU25664D6BC2EP-30 2GB
Samsung SF4721G4CKHH6DFSDS 8GB
Samsung M393A1G40DB0-CPB 8GB
Kingston KTD3KX-MIB 8GB
Kingston 9905458-017.A01LF 4GB
Corsair CMK64GX4M4B3466C16 16GB
Kingston 99U5428-018.A00LF 8GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
PNY Electronics PNY 2GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3200C16-8GVKB 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Crucial Technology CT102464BF160B-16F 8GB
Hyundai Inc AR36C18S8K2HU416R 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Corsair CMK16GX4M2E3200C16 8GB
报告一个错误
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Bug description
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