TwinMOS 8DHE3MN8-HATP 2GB vs Samsung M391A1G43EB1-CRC 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Samsung M391A1G43EB1-CRC 8GB

Samsung M391A1G43EB1-CRC 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 13.6

测试中的平均数值
更快的写入速度，GB/s

870.4 6.9

测试中的平均数值

Samsung M391A1G43EB1-CRC 8GB

需要考虑的原因
Samsung M391A1G43EB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

77 87

左右 -13% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Samsung M391A1G43EB1-CRC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 77
读取速度，GB/s

3,155.6 13.6
写入速度，GB/s

870.4 6.9
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

417 1549

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

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最新比较

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Samsung M391A1G43EB1-CRC 8GB

Samsung M391A1G43EB1-CRC 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB

Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Corsair CMSX16GX4M1A2400C16 16GB

Corsair CMSX16GX4M1A2400C16 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CB4GU2400.M8E 4GB

Crucial Technology CB4GU2400.M8E 4GB

SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BLS16G4D240FSC.16FAD 16GB

Crucial Technology BLS16G4D240FSC.16FAD 16GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Kingston ASU21D4U5S1MB-4 4GB

Kingston ASU21D4U5S1MB-4 4GB

Crucial Technology CT2K102464BD160B 8GB

Crucial Technology CT2K102464BD160B 8GB

Kingston K000MD44U 4GB

Kingston K000MD44U 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

DSL Memory D4SS1G081SH24A-A 8GB

DSL Memory D4SS1G081SH24A-A 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Golden Empire CL15-17-17 D4-3200 8GB

Golden Empire CL15-17-17 D4-3200 8GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Crucial Technology CT4G4DFS8266.C8FB 4GB

Crucial Technology CT4G4DFS8266.C8FB 4GB